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Information card for entry 1571736
Preview
| Coordinates | 1571736.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C30 H38 N2 O4 |
|---|---|
| Calculated formula | C30 H38 N2 O4 |
| Title of publication | Engineered solid-state aggregates in brickwork stacks of n-type organic semiconductors: a way to achieve high electron mobility. |
| Authors of publication | Giri, Indrajit; Chhetri, Shant; John P, Jesslyn; Mondal, Madalasa; Dey, Arka Bikash; Vijayaraghavan, Ratheesh K. |
| Journal of publication | Chemical science |
| Year of publication | 2024 |
| Journal volume | 15 |
| Journal issue | 25 |
| Pages of publication | 9630 - 9640 |
| a | 5.088 ± 0.008 Å |
| b | 7.898 ± 0.012 Å |
| c | 17.03 ± 0.02 Å |
| α | 93.5 ± 0.05° |
| β | 92.9 ± 0.04° |
| γ | 93.65 ± 0.05° |
| Cell volume | 680.7 ± 1.7 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 K |
| Number of distinct elements | 4 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.2081 |
| Residual factor for significantly intense reflections | 0.1776 |
| Weighted residual factors for significantly intense reflections | 0.3906 |
| Weighted residual factors for all reflections included in the refinement | 0.4118 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.668 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 292892 (current) | 2024-07-05 | cif/ Updating files of 1571735, 1571736, 1571737 Original log message: Adding full bibliography for 1571735--1571737.cif. |
1571736.cif |
| 292132 | 2024-06-01 | cif/ Adding structures of 1571735, 1571736, 1571737 via cif-deposit CGI script. |
1571736.cif |
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Users of the data should acknowledge the original authors of the
structural data.